欧美 偷窥 清纯 综合图区|精品丰满一区二区三区蜜桃|丝瓜芭乐樱桃秋葵小蝌蚪榴莲84|一区二区视频在线|的艳妇性史|色噜噜狠狠色综合久夜色撩人|乱理片 新乱理片2018

集成電路設計、新型存儲器、智能計算芯片

1、自然基金重大研究計劃重點支持項目，RRAM多元編碼融合存算一體張量處理芯片,項目負責人,2024~2027

2、國家重點研發(fā)計劃，嵌入式RRAM單元和工藝,課題負責人,2019~2023

3、中國科學院先導科技專項B類，存算一體計算芯片,課題負責人,2020~2024

4、自然基金青年科學基金項目，面向深度神經網絡加速的高能效RRAM存內計算芯片技術研究,項目負責人，2020-2022

1.?L. Wang, C. Dou* et al. A Flash-SRAM-ADC-Fused Plastic Computing-in-Memory Macro for Learning in Neural Networks in a Standard 14nm FinFET Process, IEEE International Solid-State Circuits Conference (ISSCC), Feb. 2024

2.?L. Wang, C. Dou* et al., A 14nm 100Kb 2T1R Transpose RRAM with >150X resistance ratio enhancement and 27.95% reduction on energy-latency product using low-power near threshold read operation and fast data-line current stabling scheme, Symposium on VLSI (VLSI), 2021

3.?C. Dou,?et al., Enabling RRAM-Based Brain-Inspired Computation by Co-design of Device, Circuit, and System, IEEE International Electron Devices Meeting (IEDM), 2021

4.?W. Ye, C. Dou* et al., A 28-nm RRAM Computing-in-Memory Macro Using Weighted Hybrid 2T1R Cell Array and Reference Subtracting Sense Amplifier for AI Edge Inference, IEEE Journal of Solid-State Circuits (JSSC), vol. 58, no.10, pp. 2839-2850, Oct 2023

5.?L. Wang, C. Dou* et al., Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM With Input-Dependent Sensing Control, IEEE Transactions on Circuits and Systems II: Express Briefs (TCASII), vol. 68, no. 5, pp. 1640-1644, May 2021

6.?X. Wang, C. Dou* et al., A 4T2R RRAM Bit Cell for Highly Parallel Ternary Content Addressable Memory, IEEE Transactions on Electron Devices (TED), vol. 68, no. 10, pp. 4933-4937, Oct. 2021,

7.?J. An, C. Dou* et al., Write–Verify-Free MLC RRAM Using Nonbinary Encoding for AI Weight Storage at the Edge, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 32, no. 2, pp. 283-290, Feb. 2024

8.?H. Hu, C. Dou* et al., A 40-nm SONOS Digital CIM Using Simplified LUT Multiplier and Continuous Sample-Hold Sense Amplifier for AI Edge Inference, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 31, no. 12, pp. 2044-2052, Dec. 2023

9.?W.-H. Chen, C. Dou et al., CMOS-integrated memristive non-volatile computing-in-memory for AI edge processors, NATURE ELECTRONICS, 2019

10.?C. Dou et al., Nonvolatile Circuits-Devices Interaction for Memory, Logic and Artificial Intelligence, 2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2018

1.?一種2T動態(tài)隨機存儲器單元多值寫入電路及方法, 發(fā)明專利, 2023, 第 1 作者, 專利號: CN116721685A

2.?基于電荷堆疊的逐次逼近型模數(shù)轉換方法及電路, 發(fā)明專利, 2023, 第 2 作者, 專利號: CN115955243A

3.?一種提高非易失性憶阻器型存儲器穩(wěn)定性的電路及存儲器, 發(fā)明專利, 2022, 第 1 作者, 專利號: CN115482858A

4.?一種基于憶阻器的存內計算陣列結構, 發(fā)明專利, 2022, 第 6 作者, 專利號: CN115376581A

5.?一種基于查找表的運算方法、裝置、介質、及電子設備, 發(fā)明專利, 2022, 第 4 作者, 專利號: CN114996646A

6.?基于局部乘-整體加結構的存內計算電路、存儲器及設備, 發(fā)明專利, 2022, 第 2 作者, 專利號: CN114863964A

7.?一種P溝道型邏輯存儲單元及非易失性存儲器, 發(fā)明專利, 2022, 第 1 作者, 專利號: CN114360594A

8.?一種靈敏放大器、存儲器讀取方法及存儲器和電子設備, 發(fā)明專利, 2020, 第 1 作者, 專利號: CN111653300A

9.?一種字線譯碼電路、字線選通方法及存儲器和電子設備, 發(fā)明專利, 2022, 第 1 作者, 專利號: CN111627481B

10.?一種存儲單元、三值內容尋址存儲器以及電子設備, 發(fā)明專利, 2021, 第 1 作者, 專利號: CN112885392A

11.?一種動態(tài)鉗位存內計算電路、存儲器以及電子設備, 發(fā)明專利, 2021, 第 1 作者, 專利號: CN113517008A

12.?實現(xiàn)雙方向并行數(shù)據(jù)讀取的非揮發(fā)存儲陣列, 發(fā)明專利, 2021, 第 1 作者, 專利號: CN111028876B